Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor
نویسندگان
چکیده
منابع مشابه
Ferromagnetic Multilayers: Magnetoresistance, Magnetic Anisotropy, and Beyond
Obtaining highly sensitive ferromagnetic, FM, and nonmagnetic, NM, multilayers with a large room-temperature magnetoresistance, MR, and strong magnetic anisotropy, MA, under a small externally applied magnetic field, H, remains a subject of scientific and technical interest. Recent advances in nanofabrication and characterization techniques have further opened up several new ways through which ...
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Optical manipulation of the magnetic anisotropy is demonstrated for bilayered manganites, La2-2xSr1+2xMn2O7, by means of femtosecond Kerr-rotation measurements. Upon the photoexcitation on the x=0.32 crystal, the magnetization exhibits the precessional motion for about 1 ns, revealing the directional change of the magnetocrystalline anisotropy from the c axis to the ab plane. This change of the...
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Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4972856